• Silicon carbide is a third-generation semiconductor material that has been placed with great expectations by new energy and advanced communication industries, so it is necessary to subdivide the supply chain to promote the vigorous development of the entire industry. Over the past decade, the team of LEAP Semiconductor Corp. has maintained its continuous investment in R&D resources, and kept pace with the world-leading research institutions in Europe and America in solving various pain points in the silicon carbide industry chain. The cost of silicon carbide material accounts for more than 50% of the device cost, which is a bottleneck that has not been broken through for scale production in China. High-quality production mode and improvement in slicing processing yield are the first steps for us to realize localization and industrialization of silicon carbide.

• Silicon carbide substrates grow silicon carbide or GaN epitaxy to produce devices based on different applications and device types. In addition to the items listed in common specifications, there are many material characteristics related to device performance. The impact of processing requires the technical team to have deep knowledge of materials science and semiconductor physics, as well as practical experience in semiconductor wafer production, to achieve compliant and applicable silicon carbide substrate products.